Title:
PRODUCTION OF ACTIVE MATRIX DISPLAY
Document Type and Number:
Japanese Patent JP3238020
Kind Code:
B2
Abstract:
PURPOSE: To obtain a method for producing an active matrix display with less masking stages, in high yield and with high productivity.
CONSTITUTION: A gate electrode 13 and a gating electrode 15 are formed on an insulating substrate 11. An insulating film 16, semiconductor thin films 17 and 18 and a metallic film 19 are then successively formed over the entire surface, and the metallic film 19 is patterned with a first resist pattern 20 as a mask. The semiconductor thin films 17 and 18 and the insulating film 16 are patterned with one out of the first resist pattern 20 and the patterned metallic film 19 as a mask to expose the gating electrode 15, and then a transparent conductive film is formed over the whole surface. The transparent conductive film is patterned with a second resist pattern as a mask to form a picture element electrode, and then the exposed part of the metallic film pattern is removed with either the second resist pattern or the picture element electrode as a mask.
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Inventors:
Tomomasa Ueda
Koshi Ikeda
Yutaka Onozuka
Koshi Ikeda
Yutaka Onozuka
Application Number:
JP22219394A
Publication Date:
December 10, 2001
Filing Date:
September 16, 1994
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
G02F1/13; G02F1/136; G02F1/1368; H01L21/336; H01L29/786; (IPC1-7): G02F1/1368; G02F1/13; H01L21/336; H01L29/786
Domestic Patent References:
| JP618215B2 |
Attorney, Agent or Firm:
Takehiko Suzue
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