PURPOSE: To produce an amorphous silicon-germanium film of superior quality by introducing a reactive gas contg. a silicon hydride compound and a germanium fluoride compound into a reaction chamber and by decomposing the reactive gas with light energy.
CONSTITUTION: Gaseous Si2H4 from a cylinder 7a, gaseous GeF4 from a cylinder 7b and gaseous H2 from a cylinder 7c are fed through mass flow controllers 9a, 9b, 9c and mixed in a prescribed ratio to prepare a reactive gas. This reactive gas is introduced into a reaction chamber 1, a support 4 is heated to about 150W400°C with a heater 5, and ultraviolet rays from low pressure mercury lamps as light sources 3 are irradiated on the inside of the chamber 1 through the window of a quartz plate 2. The reactive gas is decomposed with the ultraviolet rays to form a film of a-SiGe:H:F terminated with F and H by dangling bond on the support 4 with no damage by plasma charged particles. The film is thermally stable and has high photoconductivity and high suitability to doping.
NAKAJIMA YUKIO
WATANABE KANEO
MATSUOKA TSUGUFUMI
