Title:
PRODUCTION OF AMORPHOUS SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP3295133
Kind Code:
B2
Abstract:
PURPOSE: To enable the production of the amorphous semiconductor with which supply of materials in a gaseous state is difficult and to produce the amorphous semiconductor which has good quality, is inexpensive and is applicable to various kinds of devices while maintaining safe working environment.
CONSTITUTION: Plasma flow 17 based on the gas introduced into a plasma chamber 11 is generated by accelerating electrons under an electron cyclotron resonance condition by the interaction of microwaves and magnetic fields. This plasma flow 17 is brought into collision against a solid sputtering target 18 to jump sputtered atoms out of the sputtering target 18. The sputtered atoms are deposited on a substrate 22, by which the amorphous semiconductor thin film is formed on the substrate 22.
Inventors:
Akitsugu Hatano
Eiji Kubota
Eiji Kubota
Application Number:
JP20358792A
Publication Date:
June 24, 2002
Filing Date:
July 30, 1992
Export Citation:
Assignee:
Sharp Corporation
NTT AFTY Corporation
NTT AFTY Corporation
International Classes:
C23C14/34; C23C14/35; H01L21/203; H01L21/205; (IPC1-7): C23C14/35; H01L21/203; H01L21/205
Domestic Patent References:
| JP328367A | ||||
| JP421774A | ||||
| JP1240648A | ||||
| JP6126771A | ||||
| JP1298153A | ||||
| JP466663A | ||||
| JP4173970A | ||||
| JP6050167A |
Attorney, Agent or Firm:
Aoyama Ryo (1 person outside)
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