PURPOSE: In the ion-plating method, a silicon compound is admixed to the atmosphere gas to accelerate the growth rate of the amorphous silicon film, thus increasing the productivity and improving the characteristics.
CONSTITUTION: After the vacuum vessel is vacuumed by sucking from the outlet 8 with a pump to the level of 10-7 Torr, the base plate 3 of holder 2 is heated. Then, a mixture gas of a silicon compound such as SiH4 and hydrogen is fed from the pipe 9 into the vessel 1 and the vacuum is adjusted to the order of 10-1W10-6 Torr. The silicon source 4 is evaporated by heating with electron beams or the like and ionized together with the gas mixture by the electrode 6 with a direct or alternating potential. The silicon compound also is decomposed and silicon is fed from both the silicon source and the compound to deposit on the base plate 3 to form the amorphous silicon film. Further, the similar process can be applied to the sputtering process to form the amorphous silicon film from the silicon compound in the atmosphere.
IGARASHI TADASHI
KAWAI HIROSHI
FUJITA NOBUHIKO
