PURPOSE: To produce with high efficiency a compound oxide superconducting thin film capable of exhibiting high superconductivity stably by applying a molecular beam epitaxy or an atomic beam epitaxy in the production of a compound oxide superconduting thin film.
CONSTITUTION: A substrate 10 is attached to a substrate holder 4 provided to the inside of a vacuum chamber 1 of a molecular beam epitaxial device, and each element (e.g., Y, Ba, Cu) constituting the aimed compound oxide superconducting material or oxide of the element is contained in evaporating cells 2, 2' and 2". The vacuum chamber 1 is then evacuated to high vacuum and the evaporating cells 2, 2', 2" are heated and molecular beam or atomic beam to be generated is controlled by the opening or closing of a shutter 3 to irradiate successively the substrate 10 with the beam corresponding to the crystal structure of the aimed compound oxide superconducting material. By this method, thin films of single crystal or polycrystal are deposited on the substrate 10, and the aimed compound oxide superconducting thin film is obtd.
Fujimori, Naoharu
Yatsu, Shuji
Jodai, Tetsuji
Next Patent: THIN SUPERCONDUCTIVE FILM, ITS PRODUCTION AND ITS UTILIZATION