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Title:
PRODUCTION OF COPPER TARGET FOR THIN FILM COATING BY SPUTTERING FROM HOT EXTRUSION PROCESS
Document Type and Number:
Japanese Patent JP2022042859
Kind Code:
A
Abstract:
To provide a copper sputtering target having a crystal grain size of less than 20 microns.SOLUTION: The production of a copper sputtering target starts from the dissolution and casting process of copper having at least 99.99% of purity and copper having an oxygen content not beyond 5 ppm. Then, a hot extrusion process and a cold drawing process form a copper ingot. The hot extrusion process controls following variables so that the grain size of copper does not exceed 100 microns: 1) an extrusion ratio, 2) an ingot temperature, and 3) an extrusion rate.SELECTED DRAWING: Figure 7

Inventors:
TEKACOONHAKI VACHAKRAN
Application Number:
JP2020148487A
Publication Date:
March 15, 2022
Filing Date:
September 03, 2020
Export Citation:
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Assignee:
ORIENTAL COPPER CO LTD
International Classes:
B21C1/00; C23C14/34; B21C23/00; C22C9/00; C22F1/08
Domestic Patent References:
JP2013019010A2013-01-31
JP2005533187A2005-11-04
JP2018059171A2018-04-12
Foreign References:
WO2018066410A12018-04-12
WO2011034127A12011-03-24
Attorney, Agent or Firm:
Kichi Toshio Kawa
Hiroshi Ichikawa