Title:
PRODUCTION OF EPITAXIAL WAFER
Document Type and Number:
Japanese Patent JPS5271171
Kind Code:
A
Abstract:
PURPOSE:To correct substrate temperature distribution during growing and prevent autodoping by placing a spacer formed with a recess on the surface of a susceptor with its recess being contacted with the susceptor placing a semiconductor substrate on the flat face side of a spacer to be subjected to epitaxial growth.
Inventors:
YAMANAKA ITARU
NAKAGAWA KATSUNOBU
TAKAHASHI HIDEAKI
NAKAGAWA KATSUNOBU
TAKAHASHI HIDEAKI
Application Number:
JP14759375A
Publication Date:
June 14, 1977
Filing Date:
December 10, 1975
Export Citation:
Assignee:
MATSUSHITA ELECTRONICS CORP
International Classes:
C30B25/12; H01L21/205; H01L21/208; (IPC1-7): H01L21/208
Domestic Patent References:
| JPS5096182A | 1975-07-31 | |||
| JPS4945681A | 1974-05-01 |