PURPOSE: To obtain the title superconductor through CVD process with enhanced film formation rate and to enable metal complex raw material(s) sensitive to oxygen gas to be used, by making raw materials into ligand-contg. metal complex gases and introducing oxygen gas separately.
CONSTITUTION: A vaporized ligand (e.g. hexafluoroacetylacetone) is put into each of containers 11, 12, 13, while plural kinds of raw materials (e.g. Ba compound, Y compound, Cu compound) are put into respective containers 1, 2, 3. Thence, the ligand in the containers 11, 12, 13 is transferred, through a carrier gas (e.g. Ar), to the respective containers 1, 2, 3 followed by heating using respective heaters 8 to convert the raw materials in the containers 1, 2, 3 into ligand-contg. metal complex gases, respectively, which are then introduced into a reaction chamber 5. Simultaneously, oxygen 10 is also introduced into sand chamber 5 separately, followed by heating the resultant mixed gas using a heater 8 to cause chemical reactions, thus forming the objective filmy superconductor on a substrate 9.
UCHIDA HIROTO
SAKURAI TAKESHI
| JPH01257194A | 1989-10-13 | |||
| JPS63310515A | 1988-12-19 | |||
| JPH01219016A | 1989-09-01 |
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