Title:
PRODUCTION OF HIGH PURITY SILICON CARBIDE BODY
Document Type and Number:
Japanese Patent JPH05124864
Kind Code:
A
Abstract:
PURPOSE: To increase production efficiency by forming an SiC film on the surface of a pyrolytic BN substrate by chemical vapor deposition and then removing the substrate.
CONSTITUTION: An Si-contg. compd. such as SiCl4, a C-contg. compd. such as CH4 and H2 are fed at prescribed flow rates to the inner surface of a pyrolytic BN substrate having ≤2μm surface roughness such as a crucible and an SiC film is formed on the inner surface of the substrate by chemical vapor deposition at a high temp. of ≥1,000°C under reduced pressure in 100-2,000μm thickness. After cooling to ordinary temp., the substrate is easily separated and a high purity SiC body is obtd.
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| WO/2007/059416 | UNSEEDED SILICON CARBIDE SINGLE CRYSTALS |
Inventors:
OHASHI TOSHIYASU
KUBOTA YOSHIHIRO
HARADA KESAJI
YAMAGUCHI KAZUHIRO
KUBOTA YOSHIHIRO
HARADA KESAJI
YAMAGUCHI KAZUHIRO
Application Number:
JP31134791A
Publication Date:
May 21, 1993
Filing Date:
October 31, 1991
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
C01B31/36; B28B21/42; C04B35/56; C04B35/565; C04B41/87; C23C16/01; (IPC1-7): C01B31/36; C04B35/56; C04B41/87
Attorney, Agent or Firm:
Takashi Kojima