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Title:
PRODUCTION OF HIGH PURITY TITANIUM INGOT
Document Type and Number:
Japanese Patent JP2000204422
Kind Code:
A
Abstract:

To produce a low-oxygen and high-purity titanium material used for semi-conductor wiring material in high productivity.

(1) Into the inner part of a cylindrical precipitated titanium material produced by an Iodide method, an inner electrode 3 welded with a compact press-forming sponge titanium is inserted to form a consumable electrode and this consumable electrode is melted with vacuum-arc 4. (2) As the same way, an inner electrode welded with a titanium scrap or a titanium crop is inserted to form a consumable electrode and this consumable electrode is melted with vacuum-arc. In the above method, the oxygen concn. in the cylindrical precipitated titanium material is desirably lower than the oxygen concn. in the inner electrode inserted into the inner part thereof. Further, it is desirable to arrange fixed portions 7 respectively in the cylindrical precipitated titanium material 2 and the inner electrode inserted into the inner part thereof.


Inventors:
ONISHI TAKASHI
YOSHIMURA YASUTOKU
SHIRAISHI HIROAKI
Application Number:
JP468799A
Publication Date:
July 25, 2000
Filing Date:
January 11, 1999
Export Citation:
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Assignee:
SUMITOMO SITIX AMAGASAKI KK
International Classes:
C22B9/20; C22B34/12; (IPC1-7): C22B9/20; C22B34/12
Attorney, Agent or Firm:
Morio Mori (1 outside)