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Patent Searching and Data


Title:
PRODUCTION OF METALLIC CHALCOGENIDE COMPOUND SUPER LATTICE
Document Type and Number:
Japanese Patent JPH07133200
Kind Code:
A
Abstract:

PURPOSE: To obtain a super lattice structure without using expensive equipment such as thin film is grown under ultra-high vacuum by using plural growing baths different from each other in composition of a chalcogenide ion and a metallic ion and forming a thin film in a specific condition.

CONSTITUTION: A metallic chalcogenide compound laminated body is produced by forming successively two or more kinds of the metallic chalcogenide compound thin film having 3 to 500 film thickness on the surface of a substrate from two or more kinds of solutions different from each other in composition of the chalcogenide ion and the metallic ion. As the thin film growing method, for example, a method for growing the thin film by preparing individually a metallic ion solution and a chalcogenide containing solution, mixing and reacting both solutions just before thin film growing and bringing the resulting product into contact with the substrate, and a method for growing the thin film on the surface of the substrate by dipping the substrate after mixing both solutions and accelerating the reaction by heating or adding a pH regular are used.


Inventors:
MATSUI MASAHIRO
NAMIKATA TAKASHI
WATANABE TAKAYUKI
Application Number:
JP27557293A
Publication Date:
May 23, 1995
Filing Date:
November 04, 1993
Export Citation:
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Assignee:
ASAHI CHEMICAL IND
International Classes:
C30B29/68; H01L31/0248; H01L31/04; H01L33/06; H01L33/28; (IPC1-7): C30B29/68; H01L31/04; H01L31/0248