Title:
PRODUCTION METHOD OF SEMICONDUCTOR FILM
Document Type and Number:
Japanese Patent JP3185757
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a production method which can prevent crystallization from deteriorating after completing growing process of a solid phase or after laser irradiation.
SOLUTION: With the use of LPCVD(Low Pressure CVD) method based on disilane as a raw material, a-Si film 2 is piled on a glass substrate 1, and it is heat-treated at 600°C in the nitrogen or in the air, and then a solid-phase growth polycrystalline silicon film 3 is produced by the solid phase growth. Successively, following the LPCVD method, an impurities are inducted by using mixed gas of disilane and diborane, and impurities-inducted silicone film 41 is piled. After the pile-up of the impurities-inducted film 41, it is irradiated with laser 5 for crystallization.
Inventors:
Yoshinobu Sato
Okumura Exhibition
Kenji Sera
Okumura Exhibition
Kenji Sera
Application Number:
JP16123698A
Publication Date:
July 11, 2001
Filing Date:
June 10, 1998
Export Citation:
Assignee:
NEC
International Classes:
H01L21/205; H01L21/20; (IPC1-7): H01L21/20
Domestic Patent References:
| JP992839A | ||||
| JP5343316A | ||||
| JP39532A | ||||
| JP2119122A |
Attorney, Agent or Firm:
▲柳▼川 信