To provide a production method of a silicon single crystal ingot, by which a dislocation-free silicon single crystal ingot having high qualities over the whole length can be grown even when the silicon single crystal ingot has a large diameter of 450 mm in the cylindrical part.

The silicon single crystal ingot 25 is grown by Czochralski process by rotating a quartz crucible 13 reserving a silicon melt 12 at a predetermined rotation speed and pulling the silicon single crystal ingot 25 from the silicon melt 12 while rotating the ingot at a predetermined rotation speed in the opposite direction to the quartz crucible 13. When the cylindrical part of the silicon single crystal ingot 25 is 450 mm, the average rotation speed of the silicon single crystal ingot 25 is set to 10 rpm, and the average rotation speed of the quartz crucible is set to 10 rpm.