PURPOSE: To eliminate a middle layer at the time of etching a light shielding film for a photomask and to simplify process by forming the middle layer with the same material as the material of the light shielding film.
CONSTITUTION: A lower resist layer 14, a middle layer 16 and an upper resist layer 18 are laminated on a light shielding film 12 formed on a transparent substrate 20. Molybdenum silicide, tantalum or at least on among chromium, chromium oxide, chromium nitride, chromium charbide and chromium fluoride is used as the material of the light shielding film 12 for a photomask and the middle layer 16 is formed with the same material as the material of the film 12. The layer 16 is eliminated at the time of etching the film 12 and process is simplified.
MASUTOMI OSAMU
OTAKI MASAO
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