PRODUCTION PROCESS OF SEMICONDUCTOR DEVICE - MATSUSHITA ELECTRONICS CORP

Title:

PRODUCTION PROCESS OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH0823097

Kind Code:

A

Abstract:

PURPOSE: To make the quality of an insulation film changeable by forming a silicon nitride film on a gate insulation film on a silicon substrate and then heat treating at specified temp.

CONSTITUTION: A p-type well 12 is formed on an n-type Si substrate 11 and then a LOCOS 13 is formed. B ions are injected into the substrate 11 to form a channel dopant P- injection layer 14. A silicon nitride film is deposition-formed on a gate oxide film 15 formed on the film 14 and reoxidized to form an oxide film-nitride film 16. Poly-Si is deposited on the gate insulation film, poly-Si electrode 17 is formed, and As or P ions are implanted into the substrate 11 to form a source-drain n+ injection layer 18. This layer 18 is activated to form an n-type transistor. Then it is heat-treated below 700°C in a nitrogen atmosphere. Thus the quality of the gate insulation film is changed to make Vt changeable.

Inventors:

ISHIKAWA KATSUYA
NIWAYAMA MASAHIKO

Application Number:

JP15719594A

Publication Date:

January 23, 1996

Filing Date:

July 08, 1994

Export Citation:

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Assignee:

MATSUSHITA ELECTRONICS CORP

International Classes:

H01L27/148; H01L21/318; H01L21/339; H01L21/8234; H01L27/06; H01L29/762; H01L29/78; (IPC1-7): H01L29/78; H01L21/318; H01L21/339; H01L21/8234; H01L27/06; H01L27/148; H01L29/762

Attorney, Agent or Firm:

Akira Kobiji (2 outside)

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