PRODUCTION OF SEMICONDUCTOR DEVICE - NIPPON SEMICONDUCTOR KK

Title:

PRODUCTION OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH0629380

Kind Code:

A

Abstract:

PURPOSE: To prevent a bird's beak and provide a method for forming a field oxide film which allows less leakage current between elements.

CONSTITUTION: For manufacturing a semiconductor device whose element isolation area is constituted of a thick silicon oxide film, a silicon oxide film 44, a polycrystal silicon film 45 and an oxidation-resistant first silicon nitride film 46 are formed on a silicon semiconductor substrate 41. After patterning the silicon nitride film, a second silicon nitride film is formed, a silicon nitride side wall 50 is formed on the sidewall of the first silicon nitride film by the reactive ion etching of the second silicon nitride film and a thick field oxide film is formed on the surface of the silicon semiconductor substrate by thermal oxidation.

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Inventors:

SASAKI YOSHITAKA

Application Number:

JP28765391A

Publication Date:

February 04, 1994

Filing Date:

November 01, 1991

Export Citation:

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Assignee:

NIPPON SEMICONDUCTOR KK

International Classes:

H01L21/76; H01L21/316; (IPC1-7): H01L21/76; H01L21/316

Attorney, Agent or Firm:

Akihide Sugimura (5 outside)

Next Patent: CLEANING METHOD FOR ELECTROPHOTOGRAPHIC DEVICE