Title:
PRODUCTION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0869994
Kind Code:
A
Abstract:
PURPOSE: To obtain a method for producing a semiconductor in which the reliability of device can be enhanced by removing the native oxide without using any hydrofluoric based aqueous solution or gas and depositing a silicide of high melting point metal having low content of fluorine in the pretreatment of an underlying substrate for depositing the silicide of a high melting point metal.
CONSTITUTION: In a method for depositing tungsten silicide 34 on a wafer 12 to produce a semiconductor device, the wafer 12 is exposed to hydrogen plasma 28 prior to deposition of the tungsten silicide 34 in order to remove native oxide grown on the wafer 12.
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Inventors:
MIFUNE AKITO
Application Number:
JP20563094A
Publication Date:
March 12, 1996
Filing Date:
August 30, 1994
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/285; H01L21/28; H01L21/302; H01L21/3065; H01L21/3205; H01L23/52; (IPC1-7): H01L21/3065; H01L21/285; H01L21/3205
Attorney, Agent or Firm:
Kitano Yoshito
Next Patent: SEMICONDUCTOR DEVICE WITH PASSIVATION LAYER