Title:
PRODUCTION OF SEMICONDUCTOR SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPS6360189
Kind Code:
A
Abstract:
PURPOSE:To obtain the title single crystal without any crystal defect and further having an excellent concn. distribution by pulling up a single crystal while impressing a stationary magnetic field in the vicinity of the solidified interface of a melt and impressing a shifting magnetic field or rotating magnetic field by a low frequency on the intermediate and lower parts at the time of producing a semiconductor single crystal by a pull method. CONSTITUTION:The semiconductor single crystal 9 is pulled up from the surface of a raw material melt 2 in a crucible 1, and produced. In this case, the stationary magnetic field 4 (generated by passing a DC current through a magnet 3) is impressed in the vicinity of the solidified interface of the melt 2 to control the oscillation around the interface of the melt 2, the shifting magnetic field 6 (by a magnet 5) or the rotating magnetic field by low frequency is impressed on the intermediate and lower parts, and the crystal is pulled up while generating vertical oscillation (an agitation current 7) in the melt 2.
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Inventors:
YAMAZAKI HIDEKI
Application Number:
JP20249586A
Publication Date:
March 16, 1988
Filing Date:
August 28, 1986
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
C30B15/22; C30B15/02; C30B15/30; H01L21/18; (IPC1-7): C30B15/02; C30B15/30; H01L21/18
Attorney, Agent or Firm:
Kazuo Sato
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