To suppress the difference of characteristic on the low-temperature side especially caused by microscopic ununiformity between right and left resistance device arrays and realize the temperature characteristic of an optimal intermediate voltage, in a differential semiconductor thin-film magnetoresistive device having such a structure that an InSb epitaxial growth thin-film superior in output sensitivity and high-temperature durability is formed on an Si substrate.
First, an In Sb thin-film 2 is formed on an Si substrate 1, and a pattern is formed on the film 2 to isolate elements respectively, then a short- circuit electrode 3 is formed on the film 2, further a protection film 4 is formed thereon. In a device obtained through such steps, a compression stress is given to the film 2 by either of formation steps for film 2, electrode 3 and film 4, thereby making the prohibition band width of the film 2 to be narrower by the compression stress so as to uniform the temperature characteristic of resistance value in the device. Thus, the temperature characteristic of the intermediate voltage on the low-temperature side can be uniformalized.
HATTORI TAKAMICHI
KAWASAKI TETSUO
TANIGAWA HIDEYUKI
MATSUURA AKIRA
OUCHI SATOSHI
