PRODUCTION OF SILICON NITRIDE WHISKER

Title:

PRODUCTION OF SILICON NITRIDE WHISKER

Document Type and Number:

Japanese Patent JPH01301594

Kind Code:

A

Abstract:

PURPOSE:To efficiently obtain silicon nitride whisker in high yield, by scattering silicon nitride powder or silicon nitride whisker on the surface of mixture of silica raw material, carbon raw material and fluoride in fixed molar ratio, heating and reacting in N2 gaseous atmosphere. CONSTITUTION:Silica raw material such as high-purity silica is mixed with carbon raw material such as active carbon and fluoride such as cryolite in molar ratio of SiO2:C:F=1:(1-10):(1/12-2). Next, said mixture is filled in a vessel of tray-type having opened upper part and silicon nitride powder or silicon nitride whisker is scattered on the surface of said mixture as a seed. Then, said raw material is heated at 1,250-1,500 deg.C and reacted in N2 gaseous atmosphere. By said process, silicon nitride whisker is generated on the surface of filled layer of raw material in high yield.

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Inventors:

SAITO HAJIME
NAGASHIMA HIDEO
SUZUKI MASATAKA
FUKUI TAKEHISA

Application Number:

JP13091988A

Publication Date:

December 05, 1989

Filing Date:

May 28, 1988

Export Citation:

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Assignee:

STK CERAMICS LAB
TOSHIBA CERAMICS CO

International Classes:

C30B29/62; (IPC1-7): C30B29/62

Attorney, Agent or Firm:

Takehiko Suzue (2 outside)

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