PRODUCTION OF SINGLE CRYSTAL AND APPARATUS FOR PRODUCING SINGLE CRYSTAL

Japanese Patent JP3491402

B2

PROBLEM TO BE SOLVED: To obtain a high-quality single crystal with few defects by sublimating a raw material of a single crystal in an inert gas atmosphere under heating and making the sublimated gas flow approximately in parallel with the surface of a single crystal in a substrate of a single crystal.
SOLUTION: In a method for producing a single crystal by heating a raw material for a single crystal to be produced in an inert gas atmosphere to grow the single crystal, a sublimated gas formed by heating and sublimating the raw material is made to flow approximately in parallel with the surface of a seed crystal in a single crystal substrate containing the seed crystal and the single crystal is grown on the surface to give the objective single crystal. For example, a sublimated gas sublimated from silicon carbide raw material powder 2 makes a flow A on the surface of the silicon carbide single crystal substrate 3 by using difference in temperature between the gas and the silicon carbide single crystal substrate 3 and the removal from an open hole 6 of a cover 5 made of graphite as driving force to advance crystal growth. After the crystal is grown, a vacuum container 10 is purged by an argon gas, high-frequency electric power introduced to an induction coil is interrupted and the temperature of a crucible 1 made of graphite is lowered to complete the crystal growth.

Yasuo Kidou
Masahiko Suzuki
Naohiro Sugiyama

JP20061095A

January 26, 2004

August 07, 1995

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株式会社デンソー

C30B23/00; C30B23/02; C30B29/36; (IPC1-7): C30B23/00; C30B29/36

JP5208900A
JP6298594A
JP1286997A
JP5262599A
JP8325099A
JP6357400B2
JP11508531A
JP11513352A

【文献】独国特許出願公開4310744(DE,A1)

Takehiko Suzue

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