Title:
PRODUCTION OF SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPS5556095
Kind Code:
A
Abstract:
PURPOSE:To easily produce a high quality single crystal of a large diameter at a low cost by sliding the center of a seed crystal from the center of a raw material rod and turning the seed crystal side in production of a single crystal by a floating zone method using infrared rays. CONSTITUTION:In production of a single crystal by a floating zone method by which infrared rays from a halogen lamp, a xenon lamp or the like are concentrated with a spheroidal mirror to heat melt a raw material rod followed by crystallization, center line 10 of seed crystal 9 is set at the outside of center line 8 of raw material rod 7, crystal 9 is mounted on support stand 11, and the turning center of stand 11 is allowed to coincide with line 8 to grow a single crystal. Thus, crystal 9 turns round line 8, and infrared rays can reach the bottom center of rod 7 and the central part of melting zone 12. Accordingly, a single crystal of a large diameter can be grown, and segregation of impurities at the central part is prevented.
Inventors:
KAWACHI AKIHIKO
Application Number:
JP12797178A
Publication Date:
April 24, 1980
Filing Date:
October 18, 1978
Export Citation:
Assignee:
SUWA SEIKOSHA KK
International Classes:
C30B13/26; C30B13/22; (IPC1-7): C30B13/22
Domestic Patent References:
| JPS463017A | ||||
| JPS486364A |