PURPOSE: To form a Y1Ba2Cu3Ox superconducting thin film with the (c) axis oriented on the surface of a substrate by forming a first thin film of CuO on the substrate surface and then forming a second thin film contg. Y, Ba, Cu and O thereon.
CONSTITUTION: A substrate 6 is arranged in a reactor 5, the reactor is evacuated, and the inside of the reactor 5 is heated 7. Gaseous Ar is then supplied to a raw material feeder 1 contg. a Cu source, a mixture of the raw gas contg. Cu and gaseous O2 is supplied into the reactor 5, and the first thin film of CuO is formed on the surface of the substrate 6. The second thin film contg. Y, Ba, Cu and O is then formed on the first thin film, hence the gettering mechanism is uniformized, and a stabilized uniform film is formed. Since the homogeneous Y1Ba2Cu3Ox thin film with the (c) axis oriented is formed on the surface of the substrate 6, a high-performanoe superconducting thin film having a high critical current density is obtained by this method.
YAMAGUCHI TAICHI
KAGAWA AKIRA
KONO TSUKASA
