PURPOSE: To produce a thin film EL device having improved luminescence efficiency and luminance characteristics by treating a target made of a halide of a rare earth element with a sulfurizing gas and using the treated target for sputtering in combination with a target made of the sulfide of a group II element.
CONSTITUTION: A target 101 made of a halide of a rare earth element is set in a vacuum vessel 11 and brought into contact with a sulfurizing gas. By this contact, the target 101 is converted into a target 102 at least the surface layer of which has 1:1:1 ratio in the number of atoms among the rare earth element, halogen and sulfur. The target 102 is set in a vacuum vessel 7 and a target 91 made of the sulfide of a group II element is also set. An inert gas such as Ar is fed from the feed hole 71 and sputtering is carried out as usual to form a thin EL film on a substrate 81. Thus, a thin film EL device having improved luminescence efficiency and luminance is obtd.
OKAMOTO KENJI
YOSHIMI TAKUYA
SATO KIYOTAKE
FUJITSU LTD