PURPOSE: To efficiently form a thin-film oxide at the time of vapor-depositing an oxide on a substrate by ion plating by utilizing an arc discharge-type ion plating device having a pressure-gradient plasma producing means.
CONSTITUTION: A vessel 6 having a rotary holder 18 as a cathode to which a specularly polished quartz glass substrate 12 is fixed and a vapor-deposition source holding means 7 as an anode contg. Si is evacuated to about 5×10-4Torr. An inert gas such as Ar as a discharge gas and a gaseous O2 reactant are supplied from a gas inlet 1 in the cathode part of an electron gun 50 as a plasma producing means, a plasma producing space 51 is controlled to about 1Torr, an Ar plasma current 13 is developed by the arc discharge of the electron gun 50, Si is irradiated with the current through a plasma converging magnet 8 and vaporized, and an SiO2 film is formed on the substrate 12 by the reaction with the gaseous O2. The pressure in the vessel 6 is held lower than that in the space 51 to efficiently form the SiO2 film on the substrate 12.
UMEDA TOSHIRO
KAWAMATA KATSUHIDE
