PRODUCTION OF THIN-FILM TRANSISTOR ARRAY - MATSUSHITA ELECTRIC IND CO LTD

Title:

PRODUCTION OF THIN-FILM TRANSISTOR ARRAY

Document Type and Number:

Japanese Patent JP2000275681

Kind Code:

A

Abstract:

To form a polycrystalline silicon thin film, having the performance separately required for an image display part and a drive circuit part at a time by injecting hydrogen ions, only in the region of the polycrystalline silicon thin film where the driving circuit part is to be formed, and then crystallizing the film through irradiation of excimer laser light.

First, an insulating film 2 is formed on an insulating substrate 1. Then a polycrystalline silicon thin film 3 is formed on the insulating film 2, and a resist is formed in the region of the polycrystalline thin film 3, where the image display part is to be formed (a). Then the resist is used as a mask to inject hydrogen ion only in the region of the polycrystalline silicon thin film 3, where the drive circuit part is to be formed (b). After the resist is removed, the polycrystalline silicon thin film 3 is irradiated with excimer laser light for crystallization (c). Although hydrogen ions have been used as an impurity ions to implanting in the polycrystalline silicon thin film 3, ions of heavy hydrogen, inert elements or a mixture of these may also be used.

Inventors:

IDO MASUMI
TERAUCHI MASAHARU
NISHITANI MIKIHIKO

Application Number:

JP8331599A

Publication Date:

October 06, 2000

Filing Date:

March 26, 1999

Export Citation:

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Assignee:

MATSUSHITA ELECTRIC IND CO LTD

International Classes:

H01L29/786; G02F1/1345; G02F1/136; G02F1/1365; G02F1/1368; G09F9/30; H01L21/20; H01L21/336; (IPC1-7): G02F1/1365; G02F1/1345; G09F9/30; H01L21/20; H01L21/336; H01L29/786

Attorney, Agent or Firm:

Fumio Iwahashi (2 others)

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