Title:
PRODUCTION OF THIN-FILM TRANSISTOR PANEL
Document Type and Number:
Japanese Patent JP3200639
Kind Code:
B2
Abstract:
PURPOSE: To efficiently produce the TFT panel by constituting the panel in such a manner that picture element electrodes are prevented from being damaged at the time of formation of a resist mask in patterning of a metallic film for data wirings even if thin-film transistors(TFTs) and picture element electrodes are not held covered with interlayer insulating films while the data wirings are formed of Al or Al alloy.
CONSTITUTION: After the gate wirings GL, the TFTs 2 and the picture element electrodes 7 are formed on a substrate 1, the metallic film 11 for the data wirings consisting of Al or Al alloy are formed directly thereon and a surface layer metallic film 12 having dense film quality is formed on the metallic film 11 for the data wirings. A resist mask 13 is formed on the surface layer metallic film 12 and the surface layer metallic film 12 and the metallic film 11 for the data wirings are patterned to the shapes of the data wirings DL.
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Inventors:
Naohiro Konya
Makoto Sasaki
Makoto Sasaki
Application Number:
JP15005892A
Publication Date:
August 20, 2001
Filing Date:
May 19, 1992
Export Citation:
Assignee:
CASIO COMPUTER CO.,LTD.
International Classes:
G02F1/1343; G02F1/136; G02F1/1368; H01L27/12; H01L29/78; H01L29/786; G02F1/1362; (IPC1-7): G02F1/1368; G02F1/1343; H01L27/12
Domestic Patent References:
| JP61276374A | ||||
| JP4293021A |