Title:
PRODUCTION OF ZINC SULFOSELENIDE FILM
Document Type and Number:
Japanese Patent JPH01282198
Kind Code:
A
Abstract:
PURPOSE:To attain lattice matching and to reduce lattice detects by growing a specified epitaxial layer on a GaAs substrate and further forming an epitaxial layer of zinc sulfoselenide contg. a specified amt. of sulfur. CONSTITUTION:An epitaxial layer 2 of zinc sulfoselenide contg. 7-8wt.% sulfur is grown on the clean surface of a GaAs substrate 1 heated to 250-400 deg.C so as to regulate the thickness to <=2mum. An epitaxial layer 3 of zinc sulfoselenide contg. 5-6wt.% sulfur is then formed on the layer 2. Lattice matching with the substrate 1 is attained and a zinc sulfoselenide film nearly free from lattice defects is produced.
Inventors:
OKAWA KAZUHIRO
KARASAWA TAKESHI
MITSUYU TSUNEO
KARASAWA TAKESHI
MITSUYU TSUNEO
Application Number:
JP11310388A
Publication Date:
November 14, 1989
Filing Date:
May 10, 1988
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
C30B23/08; C30B29/48; H01L21/365; (IPC1-7): C30B23/08; C30B29/48; H01L21/365
Attorney, Agent or Firm:
Toshio Nakao (1 outside)
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