Title:
PRODUCTION OF ZNSE SINGLE CRYSTAL AND APPARATUS FOR PRODUCTION OF THE SAME
Document Type and Number:
Japanese Patent JP3821508
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for producing a ZnSe single crystal capable of growing, in a solid phase, not only ZnSe polycrystals produced by a vapor phase method, such as CVD method or PVD method but the ZnSe polycrystals produced by a high-pressure melting method as well.
SOLUTION: The ZnSe polycrystals 1 produced by the vapor phase method or high-pressure melting method are put together with Zn or Se into a airtight heat resistant vessel 2 and this vessel 15 vacuum sealed. The vessel is then packed into a carbon vessel 3 and is heated to a temp. above the phase transition point (1400°) of ZnSe and below the m. p. (1550°C) and is kept at this temp. for 2 to 10 hours in an electric furnace 4 controlled in heating; thereafter, the polycrystals are cooled at a rate of 50 to 200°C/hour, by which the single crystal is formed.
Inventors:
Shuji Otaka
Takeharu Yamamura
Toru Sagawa
Katsuo Fuefuki
Takeharu Yamamura
Toru Sagawa
Katsuo Fuefuki
Application Number:
JP5248696A
Publication Date:
September 13, 2006
Filing Date:
February 15, 1996
Export Citation:
Assignee:
DOWA MINING CO.,LTD.
International Classes:
C30B1/02; C30B29/48; H01L33/28; H01S5/00; (IPC1-7): C30B29/48; C30B1/02; //H01L33/00; H01S3/18
Domestic Patent References:
| JP59083915A | ||||
| JP6009299A | ||||
| JP7138097A |
Attorney, Agent or Firm:
Kenji Wada
Komatsu Taka
Koji Hagiwara
Komatsu Taka
Koji Hagiwara