PROJECTION MASK, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND MANUFACTURING APPARATUS

Title:

PROJECTION MASK, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND MANUFACTURING APPARATUS

Document Type and Number:

Japanese Patent JP2006210413

Kind Code:

A

Abstract:

To provide a mask having high durability against laser beam having a wavelength in an ultraviolet area.

This projection mask is one which transmits a first laser beam having a wavelength in an ultraviolet area, and in which the material of a light-shielding section is an alloy of a composition including an aluminum and a refractory metal. Preferably, the refractory metal is tungsten or molybdenum. Also, this method of manufacturing the semiconductor device is for irradiating a semiconductor film formed on a substrate with a laser beam to crystalize the semiconductor film, in which a first laser irradiation area is restricted by a projection mask which transmits a first laser beam having a wavelength in an ultraviolet area, and in which the material of a light-shielding section is an alloy of a composition including an aluminum and a refractory metal.

Inventors:

NAKAYAMA JUNICHIRO
TSUNASAWA HIROSHI

Application Number:

JP2005017153A

Publication Date:

August 10, 2006

Filing Date:

January 25, 2005

Export Citation:

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Assignee:

SHARP KK

International Classes:

H01L21/20

Domestic Patent References:

JP2001326190A	2001-11-22
JP2004363130A	2004-12-24
JPH11307450A	1999-11-05
JPH06345415A	1994-12-20
JPH03204986A	1991-09-06
JP2006100809A	2006-04-13

Attorney, Agent or Firm:

Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai

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