Title:
PULLING DEVICE FOR SINGLE CRYSTAL SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPS6033295
Kind Code:
A
Abstract:
PURPOSE:To obtain a single crystal semiconductor having high resistance and contg. only slight striate by constructing the inside surface of a crucible supported freely rotatably with silicon nitride and impressing magnetic field to the molten starting material of a semiconductor in the crucible. CONSTITUTION:The crucible 11 is constructed by coating silicon nitride film 11b on the surface of a quartz crucible main body 11a by CVD process. Further, an annular superconductive coil 12 is provided to the external periphery of a chamber 1. During pulling up of the single crystal silicon 10, magnetic field in the perpendicular direction to the molten silicon 9 is impressed by the superconductive coil 12. Since silicon nitride film 11b is coated on the inside surface of the crucible 11 in this pulling device, there is no fear of including oxygen or other impurities in the molten silicon 9. Moreover, since magnetic field in the perpendicular direction to the molten silicon 9 is impressed by the superconductive coil 12, and the component in the horizontal direction of the convection is chiefly retarded, generation of striate in the single crystal silicon 10 to be prepd. is prevented to the least degree.
Inventors:
ASANO MASAFUMI
WATANABE MASAHARU
TAJI HIDEKAZU
YAMATO MITSUHIRO
WATANABE MASAHARU
TAJI HIDEKAZU
YAMATO MITSUHIRO
Application Number:
JP13925683A
Publication Date:
February 20, 1985
Filing Date:
July 29, 1983
Export Citation:
Assignee:
TOSHIBA CERAMICS CO
International Classes:
C30B15/10; C30B15/30; H01L21/02; H01L21/208; (IPC1-7): C30B15/00; H01L21/02; H01L21/208
Domestic Patent References:
| JPS56104791A | 1981-08-20 | |||
| JPS56100996A | 1981-08-13 |
Attorney, Agent or Firm:
Takehiko Suzue