Title:
PURE WATER RINSING METHOD
Document Type and Number:
Japanese Patent JP3353477
Kind Code:
B2
Abstract:
PURPOSE: To shorten rinse time and also remove pollutant from the wafer surface in pure water rinsing in wafer washing process.
CONSTITUTION: Chemically treated wafer 1 is first rinsed with pure water 10 at normal temperature, next, it is rinsed with high temperature pure water 20 thereafter rinsed with pure water 30 at normal temperature. High temperature pure water is set to a predetermined temperature between 50°C to boiling point or 65°C to boiling point. By doing this, most portion of residual chemicals locally stuck to the wafer surface is removed by pure water at normal temperature, and then remaining chemicals can be removed by high temperature pure water 20 while preventing the etching irregularity on the wafer surface. Also, etching of a natural oxide film on the surface of the wafer 1 and the formation of the natural oxide film progress in high temperature pure water 20, and a new natural oxide film is formed on the surface of wafer 1.
Inventors:
Katsunori Kokubun
Kiyoshi Kurosawa
Kiyoshi Kurosawa
Application Number:
JP18544794A
Publication Date:
December 03, 2002
Filing Date:
July 13, 1994
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L21/304; (IPC1-7): H01L21/304
Domestic Patent References:
| JP731945A | ||||
| JP6246247A | ||||
| JP3270228A | ||||
| JP63133534A | ||||
| JP63114131A |
Attorney, Agent or Firm:
Kuninori Funabashi