To dissolve the problem that, although it is required to remove moisture from nitric oxide necessary in semiconductor production, or the like, a nitric oxide gas purifying material which does not advance disproportionation and decomposition reaction of nitric oxide gas and does not increase impurities, is not known.

The nitric oxide gas purifying material for removing minute amount of moisture contained in the nitric oxide gas by chemical adsorption is produced by depositing anhydrous aluminum fluoride on a surface of an inactive supporting body. Further, a purifier using the nitric oxide gas purifying material is also provided.