To restrict piling-up and broadening by specifying the relation of the height of a baffle as against a light hole with the height of the baffle as against the heavy hole.
The energy structure of a quantitative well layer is provided with a valence electron band with structure where the height of the baffle as against the light hole is different from that as against the heavy hole. The band end LH of the valence electron as against the light hole takes a fixed energy state and it is indicated by a dashed line. The band end HH of the valence electron as against the heavy hole forms a potential well where energy is increased in the well layer and it is indicated by a solid line. When the height of the baffle as against the light hole is adopted as ΔEL and that as against the heavy hole is adopted as ΔEH, the energy structure of the quantitative well layer is provided with structure where ΔEL<ΔEH. That is, the depth of the well sensed by the heavy hole is larger compared with the depth of the well sensed by the light hole.
KUTSUZAWA SATOKO
ARATAIRA SHIN
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