Title:
QUANTUM WELL STRUCTURE LIGHT-EMITTING DEVICE
Document Type and Number:
Japanese Patent JP3399374
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To realize an n-type light-emitting layer of quantum well structure which is superior in emission intensity and monochromaticity by a method, wherein the conductor of a terminal well layer is so formed in potential as to be curved and protrudes downward on a low potential side toward the Fermi level.
SOLUTION: A single-quantum well structure has a structure, where a well layer 11 is pinched between a barrier layer 10 and an interposing layer 12 to form a light-emitting layer. The light-emitting layer 1a is pinched between an n-type clad layer 13 and a p-type clad layer 14 to form a light-emitting section 1. That is, the well layer 11 serves as a terminal well layer 11a, and the interposing layer 12 is inserted between the terminal well layer 11a and the p-type clad layer 14. At this point, a conductor 16 is formed curved protruding downward to form a low potential section 18, only in the inner region of the terminal well layer 11a near its junction interface 15a with the n-type interposition layer 12. With this setup, a light-emitting layer of quantum well structure formed of III nitride semiconductor and superior in monochromaticity can be realized.
More Like This:
Inventors:
Takashi Udagawa
Application Number:
JP30295998A
Publication Date:
April 21, 2003
Filing Date:
October 23, 1998
Export Citation:
Assignee:
SHOWA DENKO K.K.
International Classes:
H01L33/06; H01L33/32; H01S5/00; H01S5/323; H01S5/34; H01S5/343; (IPC1-7): H01S5/343; H01L33/00
Domestic Patent References:
| JP10270758A | ||||
| JP10173227A |
Attorney, Agent or Firm:
Shinji Kakinuma