QUARTZ CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL

Title:

QUARTZ CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL

Document Type and Number:

Japanese Patent JP2006273672

Kind Code:

A

Abstract:

To provide a quartz crucible for pulling a silicon single crystal, which does not fall down even when it is used in a high temperature environment and with which the silicon single crystal can be pulled in a good productivity without interruption of pulling the single crystal.

The quartz crucible for pulling the silicon single crystal has a transparent layer being brought into contact with a silicon melt and an opaque layer provided at the outer periphery of the transparent layer and containing many air bubbles. The linear expansion coefficients of the transparent layer and the opaque layer above the liquid level in the thickness direction are within a range of 0.001-0.005% and a range of 5-15%, respectively, before or after pulling the silicon single crystal.

Inventors:

MISU KIYOAKI
KIKUCHI TOSHIYUKI
MIZUNO KOSHIN
OBATA NAOYUKI

Application Number:

JP2005096825A

Publication Date:

October 12, 2006

Filing Date:

March 30, 2005

Export Citation:

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Assignee:

TOSHIBA CERAMICS CO

International Classes:

C30B29/06; C30B15/10

Domestic Patent References:

JP2004352580A	2004-12-16
JP2001233629A	2001-08-28

Attorney, Agent or Firm:

Hisashi Hatano
Shunguchi Sekiguchi

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