Title:
R-T-B系永久磁石
Document Type and Number:
Japanese Patent JP5565497
Kind Code:
B1
Abstract:
The present invention provides a permanent magnet which is excellent in the temperature properties and the magnetic properties of which will not be significantly decreased, compared to the conventional R-T-B based permanent magnet. In the R-T-B based structure, a stacked structure of R1-T-B based crystal layer and Y-T-B based crystal layer can be formed by alternatively stacking R1-T-B and Y-T-B. In this way, a high magnetic anisotropy field of the R1-T-B based crystal layer can be maintained while the temperature coefficient of the Y-T-B based crystal layer can be improved.
Inventors:
Ryuji Hashimoto
Kenichi Suzuki
Choi Kyokyu
Kenichi Nishikawa
Kenichi Suzuki
Choi Kyokyu
Kenichi Nishikawa
Application Number:
JP2013092235A
Publication Date:
August 06, 2014
Filing Date:
April 25, 2013
Export Citation:
Assignee:
tdk Corporation
International Classes:
H01F1/057; H01F1/06; H01F1/08; H01F10/10
Domestic Patent References:
| JP2012043968A | 2012-03-01 | |||
| JP2008270699A | 2008-11-06 | |||
| JP2008266767A | 2008-11-06 | |||
| JP2008060183A | 2008-03-13 | |||
| JP2012039100A | 2012-02-23 | |||
| JP5370609B1 | 2013-12-18 |