To provide a radiation-sensitive resin composition which is a material of a resist film that obtains a good pattern shape, has excellent depth of focus, prevents elution into a liquid for liquid immersion exposure, such as water, ensures a large receding contact angle to the liquid for liquid immersion exposure, and prevents development defects, and to provide a polymer to be used as a resin component of the radiation-sensitive resin composition, and a resist pattern forming method using the radiation-sensitive resin composition.
In the invention, a plurality of fluorine atom-containing polymers are used at the same time. The radiation-sensitive resin composition comprises a fluorine atom-containing polymer (A1) which, under the following conditions, dissolves in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23°C at a dissolution rate of <10 nm/s; a fluorine atom-containing polymer (A2) which, under the following conditions, dissolves in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23°C at a dissolution rate of ≥10 nm/s; a polymer (B) which has an acid-dissociable functional group dissociating by the action of an acid and becomes alkali-soluble upon dissociation of the acid-dissociable functional group; and a radiation-sensitive acid generator (C). [Conditions]: a solution of a fluorine-containing polymer in 4-methyl-2-pentanol (solid concentration: 11 wt.%) is spin-coated onto a substrate and baked under the conditions of 90°C×60 s to form a coating film having a film thickness of 300 nm.
KAWAKAMI MINEKI
OIZUMI YOSHIJI
NARUOKA TAKEHIKO
SAKAI KAORI
ASANO YUSUKE
KASAHARA KAZUKI
| JPWO2007116664A1 | 2009-08-20 | |||
| JP2004294688A | 2004-10-21 | |||
| JP2009008824A | 2009-01-15 | |||
| JP2010044358A | 2010-02-25 |