PURPOSE: To increase the rate of formation of a thin film of the oxide of a target substance on a substrate by applying bias potential to the substrate to attract O ions in plasma of a gaseous mixture of an inert gas with gaseous O2 to the substrate.
CONSTITUTION: Bias potential is applied to a substrate 6 on which a thin film of the oxide of the substance of a target 2 is formed from a DC power source 9 for bias to attract O ions generated by gas discharge in an atmosphere of a gaseous mixture of an inert gas with gaseous O2 to the substrate 6. The target substance sputtered from the target 2 bonds to O ions in plasma and deposits on the substrate 6, forming a thin film of the oxide of the target substance. By this method, the rate of film formation is increased.
NAKAGAWA YOSHIO
ABE KATSUO
KAMEI TSUNEAKI
