Title:
フローティングゲート結合に対する補償を伴う不揮発性記憶装置に対する読み出し動作
Document Type and Number:
Japanese Patent JP4954223
Kind Code:
B2
Abstract:
Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To account for this coupling, the read process for a particular memory cell will provide compensation to an adjacent memory cell in order to reduce the coupling effect that the adjacent memory cell has on the particular memory cell. For this, a read voltage is applied to the word line of the selected memory cell, a second pass voltage is applied to the word line of the memory cell adjacent to the selected memory cell and a first pass voltage is applied to the further word lines. Before reading the selected memory cell, the state of the adjacent memory cell is read and, according to this state, the second pass voltage is set.
Inventors:
Moclessie Nima
Application Number:
JP2008557330A
Publication Date:
June 13, 2012
Filing Date:
February 27, 2007
Export Citation:
Assignee:
SanDisk Corporation
International Classes:
G11C16/02; G11C16/04; G11C16/06
Domestic Patent References:
| JP2004326866A |
Attorney, Agent or Firm:
Kaiyu International Patent Office