To provide a rectifier element capable of improving breakdown voltage while reducing stationary loss, and a manufacturing method thereof.
The rectifier element 10 includes an n- semiconductor layer 2 consisting of a wide band gap semiconductor; Schottky electrodes 3 and 5 forming Schottky contact with the n- semiconductor layer 2; and a cathode electrode 4 capable of applying potential different from that of the Shottky electrode 5 and electrically connected to the n- semiconductor layer 2. The height of the Schottky barrier between the Schottky electrode 5 and the n- semiconductor layer 2 is higher than the height of a Schottky barrier between the Schottky electrode 3 and the n- semiconductor layer 2. The rectifier element 10 can select a state where the difference in potential between the Schottky electrodes 3, 5 and the cathode electrode 4 changes, thereby applying a current between the Schottky electrode 5 and the cathode electrode 4 and a state where the n- semiconductor layer 2 between the Schottky electrode 5 and the cathode electrode 4 is made into a depletion layer to disconnect a current path.
| JP2004031896A | 2004-01-29 | |||
| JP2003506903A | 2003-02-18 | |||
| JP2000512075A | 2000-09-12 | |||
| JP2000252479A | 2000-09-14 | |||
| JPH05259436A | 1993-10-08 |
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai