REDUCTION OF CRYSTAL DEFECT

Title:

REDUCTION OF CRYSTAL DEFECT

Document Type and Number:

Japanese Patent JPH06196402

Kind Code:

A

Abstract:

PURPOSE: To reduce crystal defects by a method wherein X-ray standing waves are raised in the nearby part on a crystal surface by irradiating the part with intensive monochromic X-rays of a crystal under the Bragg reflection condition.

CONSTITUTION: The X-rays 3 in wavelength of 1.540598 are entered into the surface of a substrate 1 in the direction of 14.222°. At this time, the X-ray standing waves are raised in the nearby part on a substrate surface under the Bragg reflection condition. The node position of the standing waves on a lattice plane can be adjusted by adjusting the incident angle within the range of a few seconds in such a state wherein the node of the standing waves coincides with a lattice plane. In this state, the transition circle existing in the nearby part on the surface can be completely extinguished by leaving the substrate temperature intact at 300°C for one hour. Furthermore, the crystal defects can be notably lowered.

Inventors:

TANIGAWA AKIO

Application Number:

JP35784692A

Publication Date:

July 15, 1994

Filing Date:

December 25, 1992

Export Citation:

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Assignee:

NEC CORP

International Classes:

H01L21/20; H01L21/268; H01L21/322; (IPC1-7): H01L21/20; H01L21/268; H01L21/322

Attorney, Agent or Firm:

Chieko Tateno

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