Title:
低減インピーダンスチャンバ
Document Type and Number:
Japanese Patent JP4256587
Kind Code:
B2
Abstract:
A reduced impedance chamber for plasma processing leads to operational advantages including a plasma sheath voltage that is substantially independent of plasma impedance over a range of plasma impedances. The design of such a reduced impedance chamber includes a chuck assembly, a counter electrode, and a plasma source. The chuck assembly allows mounting of a workpiece for processing and includes a driven electrode and a ground portion. The plasma source operates to generate a plasma in the chamber from process gas. A wall portion of the plasma source is directly electrically connected to the counter electrode and to the ground portion of the chuck assembly. The counter electrode may include an inject-exhaust plate that is mounted in a position opposed to the chuck assembly and that operates to inject process gas into the chamber and to exhaust effluent.
Inventors:
ジョンソン、ウェイン、エル
Application Number:
JP2000543662A
Publication Date:
April 22, 2009
Filing Date:
April 12, 1999
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/205; B01J3/00; H05H1/46; B01J3/02; H01J37/32; H01L21/00; H01L21/302; H01L21/3065; C23C16/44
Attorney, Agent or Firm:
伊東 忠彦