PURPOSE: To eliminate a positional deviation between layers in an exposure method for correcting projected and recessed portions of a wafer, by making alignment and determining shot positions under the condition where the shot planes of wafer have been aligned with the best image surface.

CONSTITUTION: Shown are a wafer W, shot positions S1, S2, S3, S4 and S5, a point of support A and the best image surfaces S'1, S'2, S'3, S'4 and S'5 corresponding to respective shots sloped from point A as the point of support. A horizontal line indicated by a dotted line is the best image surface. Each circle shows the sampling shot position. Shot position for each shot is measured by aligning a shot surface S with the best image surface F, and then the arrangement of shot positions for the whole wafer is determined. Based on this arrangement of the shot positions, a stage is driven and moved to shot positions based on a stage accuracy only, the shot plane S is aligned with the best image surface F and an exposure is made.