PURPOSE: To obtain Ga of high quality at the time of growing seed crystals put on the side of a cooling medium of metallic Ga by finding the solidifying speed from a solid-liquid interface detected by the scanning with infrared rays or supersonic waves and regulating the progressing condition in the solidifying.
CONSTITUTION: Seed crystals are put on the side of a cooling medium 2 of molten Ga 6, are grown and are solidified in the direction of the other side into crystal solidified metal 7. At this time, scanning is executed with infrared rays or ultrasonic waves to detect the interface between the liquid area (molten Ga 6) and the solid area (crystal solidified metal 7). By the result in the detection of the interface, the solidifying speed in the metallic Ga 7 is regulated to obtain Ga of high quality.
ARAI KAZUMASA
HAMABE NOBUHIKO
MITSUBISHI CHEM IND