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Title:
REFLECTION PREVENTIVE FILM DEPOSITING APPARATUS AND REFLECTION PREVENTIVE FILM MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2008274334
Kind Code:
A
Abstract:

To increase the safety when depositing a reflection preventive film, and to enhance the productivity by effectively performing the hydrogen passivation to a substrate.

In a film deposition apparatus 1 for depositing a reflection preventive film for a solar cell, a plasma beam Pb2 is fed in a film deposition chamber 9 to sublimate a tablet M consisting of silicon oxide to deposit the reflection preventive film. In addition, a hydrogen ion generating gas is introduced in the film deposition chamber 9 to generate hydrogen ions in an arc plasma environment, and a dangling bond is terminated with the hydrogen ions. Since the tablet M consisting of silicon oxide is used in the film deposition apparatus 1, the safety is considerably high compared with that of monosilane gas. In addition, the hydrogen passivation is promoted by the heating by a heater 26. As a result, the productivity can also be enhanced while effectively performing the hydrogen passivation to a substrate W.


Inventors:
MIYOSHI AKIRA
MURAKAMI YOSHINOBU
Application Number:
JP2007117441A
Publication Date:
November 13, 2008
Filing Date:
April 26, 2007
Export Citation:
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Assignee:
SUMITOMO HEAVY INDUSTRIES
International Classes:
C23C14/06; C23C14/24; C23C14/32; C23C14/56; H01L31/04
Attorney, Agent or Firm:
Yoshiki Hasegawa
Shiro Terasaki
Yoshiki Kuroki
Hiroyuki Nishimoto