To provide a reflection-type X-ray mask structure, which does not generate a multiple-exposure region in a boundary portion between adjacent exposure regions on a wafer even when step-and-repeat or step-and-scanning exposure is performed in a semiconductor exposure apparatus, an X-ray exposure apparatus and method with which a pattern transfer can be favorably performed at high density, and a device more highly integrated than a conventional device.

This reflection-type X-ray mask structure has an X-ray reflection multilayer film on which an X-ray absorber pattern is formed, and a supporting board for supporting the X-ray reflection multilayer film. By using this reflection-type X-ray mask structure, patterns are successively transferred to a plurality of portions of a transfer target by a step-and-repeat method or a step-and-scanning method. There is no reflection multilayer film in a region surrounding the area where the transferred pattern is formed. The X-ray reflectance in the surrounding region is set to be lower than that of the region where the transferred pattern is formed.