Title:
REFLECTIVE MASK BLANK, REFLECTIVE MASK AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2015122468
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a reflective mask blank capable of preventing reflectance with respect to EUV light from being varied by interdiffusion caused by thermal diffusion between a protection film and a material of a phase shift film pattern neighboring thereto in the case where an exposure light source of an EUV exposure machine becomes high power, a reflective mask manufactured thereby and a manufacturing method of a semiconductor device.SOLUTION: In the reflective mask blank, a multilayer reflection film 13, a protection film 14 and a phase shift film 16 for shifting the phase of EUV light are formed on a substrate 12 in this order. The protection film 14 is formed from a material containing ruthenium as a main component, and the phase shift film 16 includes a tantalum-based material layer containing tantalum. On a surface of the protection film 14 or at a side in contact with the phase shift layer 16 as a part of the protection film 14, a diffusion-proof layer 15 containing ruthenium and oxygen is formed for preventing interdiffusion with the phase shift film 16. Thus, thermal diffusion between the protection film 14 and the material of the phase shift film pattern is prevented.
Inventors:
IKEBE YOHEI
ONOE TAKAHIRO
SHOKI TSUTOMU
ONOE TAKAHIRO
SHOKI TSUTOMU
Application Number:
JP2013266982A
Publication Date:
July 02, 2015
Filing Date:
December 25, 2013
Export Citation:
Assignee:
HOYA CORP
International Classes:
H01L21/027; C23C14/06; G03F1/24
Domestic Patent References:
| JP2010092947A | 2010-04-22 | |||
| JP2009212220A | 2009-09-17 | |||
| JP2010080659A | 2010-04-08 | |||
| JP2012151368A | 2012-08-09 | |||
| JP2008539573A | 2008-11-13 | |||
| JP2005516182A | 2005-06-02 | |||
| JP2006170916A | 2006-06-29 |
Foreign References:
| WO2011071086A1 | 2011-06-16 |
Attorney, Agent or Firm:
Hiroshi Oshino
Takafumi Oshima
Takafumi Oshima
Previous Patent: CAPACITOR
Next Patent: SEMICONDUCTOR MOUNTING SUBSTRATE AND MANUFACTURING METHOD THEREOF
Next Patent: SEMICONDUCTOR MOUNTING SUBSTRATE AND MANUFACTURING METHOD THEREOF