To provide a reflective mask that removes reflection of light of EUV and DUV regions from a mask region corresponding to a boundary region of a chip to be multiple exposure on a semiconductor substrate, and a method of manufacturing the reflective mask.

There is provided a reflective mask for exposure that has a multi-layered reflective layer, a protective layer, and an absorptive layer laminated in this order on one surface of a substrate and also having a conductor layer formed on the other surface. The absorptive layer is partially etched away to form a circuit pattern portion, and the absorptive layer, protective layer, and multi-layered reflective layer are etched away to form a light shield frame portion on which the surface of the substrate is exposed at an outer periphery of the circuit pattern portion. A part of the substrate is removed to form a space at a bottom portion of the light shield frame portion, the space being sectioned in a V shape (an isosceles triangle shape having its vertex angle at a deepest portion on a substrate side) or in a wedge shape (a right-angled triangle shape having its oblique side on the substrate side).