Title:
REFRACTORY AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2002284577
Kind Code:
A
Abstract:
To provide a refractory at a low cost having a thermal resistance ≥1,100°C, high alkali resistance and high mechanical strength and its manufacturing method.
The refractory comprises α-silicon carbide, α-silicon nitride, β-silicon nitride, and silicon oxynitride and substantially does not contain cristobalite. Preferably, it comprises 60-85 wt.% α-silicon carbide and 15-40 wt.% total of α-silicon nitride, β-silicon nitride and silicon oxynitride. The refractory is manufactured by forming a compact comprising 65.0-85.0 wt.% silicon carbide powder, 10.5-33.5 wt.% silicon powder, and 1.5-4.5 wt.% microsilica powder and firing it in an nitrogen atmosphere.
Inventors:
HARA TOMOHIKO
ITO YASUO
IRIMURA JUNICHI
ITO YASUO
IRIMURA JUNICHI
Application Number:
JP2001087409A
Publication Date:
October 03, 2002
Filing Date:
March 26, 2001
Export Citation:
Assignee:
NICHIAS CORP
International Classes:
F23M5/00; C04B35/565; C04B41/86; F27D1/00; F27D1/06; (IPC1-7): C04B35/565; C04B41/86; F23M5/00; F27D1/00; F27D1/06
Attorney, Agent or Firm:
Kenji Akatsuka (1 outside)